U.S. Government Selects Navitas to Develop Next-Generation 10 kV SiC Power Semiconductors
Navitas Semiconductor was awarded the U.S. Army's ALATTIS program to develop next-generation 10 kV silicon carbide IGBT and PiN diode technology for defense and critical infrastructure applications. The program, sponsored by DEVCOM Army Research Laboratory with JETX support, aims to validate a novel domestic manufacturing process for ultra-high-voltage SiC devices currently unavailable in the U.S.
Key figures
- Voltage range
- 650 V to 6.5 kV (existing GeneSiC portfolio); program targets ≥10 kV SiC IGBTs
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