Microchip Expands Space Power Portfolio with New Radiation-Tolerant GaN Point-of-Load Converter
Microchip Technology launched the POL-05-20S-T, a radiation-tolerant GaN point-of-load converter delivering up to 20A for space processing applications. The device is characterized for Total Ionizing Dose up to 50 krad and Single Event Effects up to LET of 43 MeV·cm²/mg, and operates from −55°C to +100°C at full load.
Key figures
- See let
- 43 MeV·cm²/mg
- Tid rating
- 50 krad
- Operating temp
- −55°C to +100°C at full load
- Output current
- 20A
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