Atomera Has Signed a Joint Development Agreement With IQE to Bring High-Performance, Cost-Effective RF GaN-on-Silicon to Volume Markets

Atomera signed a Joint Development Agreement with IQE plc to co-optimize MST-enabled GaN-on-silicon wafers for high-volume RF markets. IQE will manufacture the MST-enabled wafers for foundry, IDM and fabless customers, with an initial focus on demonstrating best-in-class linearity and loss for RF GaN; the partners may later expand into power electronics.

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