Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management
Navitas Semiconductor launched the UHV-TO-247-4-ISO package, a new isolated through-hole form factor for its GeneSiC silicon carbide MOSFETs. The package integrates an aluminum nitride substrate to provide over 6000 V of isolation and enables direct-cooled thermal management, eliminating the need for external thermal interface materials.
Key figures
- Voltage ratings
- ["1200 V","2300 V","3300 V"]
- Creepage distance
- >12 mm
- Isolation voltage
- >6000 V
- Power dissipation increase
- up to 150%
- Thermal resistance reduction
- up to 60%
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