Roundhill Memory ETF (DRAM): ETF
ETF traded on BATS under symbol DRAM. Quoted in usd.
Roundhill Memory ETF
The Roundhill Memory ETF (DRAM) is designed to offer investors a focused investment opportunity within the worldwide semiconductor memory industry. Its portfolio is strategically constructed to prioritize leading companies that command substantial market presence and revenue in memory products and associated technologies. This includes a broad spectrum of memory solutions such as high bandwidth memory, dynamic random-access memory (DRAM), NAND flash memory (encompassing solid-state drives built on NAND), NOR flash memory, hard disk drives, and specialized or embedded memory components. The fund's deliberate emphasis on major, large-capitalization firms is deemed essential for supporting the advancements in artificial intelligence. To execute its active investment approach, the fund has the flexibility to invest in common stocks or financial derivatives, such as swaps or forwards. The allocation of portfolio weights follows a modified market capitalization methodology, with a safeguard that no single company can constitute more than 25% of the fund. These weightings are determined by the advisor's evaluation of each company's market position and revenue generation within the memory sector. The portfolio undergoes rebalancing at a minimum of every three months.
Largest holdings
- 005930.KS Samsung Electronics Co Ltd19.31%
- FGXXX First American Government Obligations Fund 12/01/203117.38%
- 912797VP9 United States Treasury Bill 11/03/202616.41%
- 000660.KS SK hynix Inc14.68%
- MICRON TECHNOLOGY INC SWAP NM13.13%
- MICRON TECHNOLOGY, INC.-SWAP-GOLD-L11.30%
- 912797WN3 United States Treasury Bill 01/05/202710.87%
- SAMSUNG ELECTRONICS -SWAP-GOLD-L7.00%
- 912797VA2 United States Treasury Bill 12/03/20265.45%
- SK HYNIX INC-SWAP-GOLD-L5.41%
30d
31.91M
60d
30.00M
90d
40.05M